Digital to analogue converter based on single-electron tunnelling transistor

被引:7
作者
Hu, CH
Cotofana, SD
Jiang, J
机构
[1] Delft Univ Technol, Comp Engn Lab, Elect Engn Math & Comp Sci Fac, NL-2628 CD Delft, Netherlands
[2] Shanghai Jiao Tong Univ, Res Inst Micro Nanometer Sci & Technol, Shanghai 200030, Peoples R China
来源
IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS | 2004年 / 151卷 / 05期
关键词
D O I
10.1049/ip-cds:20040992
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A digital to analogue converter (DAC) based on a single-electron tunnelling transistor (SETT) is proposed. The proposed scheme fully utilises the Coulomb blockade effect and only a SETT and n + 1 capacitors are necessary for an n-bit DAC implementation. Using this scheme, a 4-bit DAC is demonstrated by means of simulation.
引用
收藏
页码:438 / 442
页数:5
相关论文
共 16 条
[11]  
LIKHAREV K, 2002, ADV SEMICONDUCTOR 1
[12]   Single-electron devices and their applications [J].
Likharev, KK .
PROCEEDINGS OF THE IEEE, 1999, 87 (04) :606-632
[13]   Single-electron and quantum SOI devices [J].
Ono, Y ;
Yamazaki, K ;
Nagase, M ;
Horiguchi, S ;
Shiraishi, K ;
Takahashi, Y .
MICROELECTRONIC ENGINEERING, 2001, 59 (1-4) :435-442
[14]   COMPLEMENTARY DIGITAL LOGIC BASED ON THE COULOMB BLOCKADE [J].
TUCKER, JR .
JOURNAL OF APPLIED PHYSICS, 1992, 72 (09) :4399-4413
[15]   A comparative study of single-electron memories [J].
Wasshuber, C ;
Kosina, H ;
Selberherr, S .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (11) :2365-2371
[16]  
WASSHUBER C, 2001, SIMON SIMULATION NAN