Direct-bandgap electroluminescence from tensile-strained Ge/SiGe multiple quantum wells at room temperature

被引：3

作者：

He Chao ^{[1
]}

Liu Zhi ^{[1
]}

Zhang Xu ^{[1
]}

Huang Wen-Qi ^{[1
]}

Xue Chun-Lai ^{[1
]}

Cheng Bu-Wen ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

来源：

CHINESE PHYSICS B | 2014年 / 23卷 / 11期

基金：

中国国家自然科学基金;

关键词：

Ge; multiple quantum wells; tensile strain; electroluminescence; SILICON; LASER; GE; SI; INTEGRATION; GAP;

D O I：

10.1088/1674-1056/23/11/116103

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Tensile-strained Ge/SiGe multiple quantum wells (MQWs) were grown on a Ge-on-Si virtual substrate using ultrahigh vacuum chemical vapor deposition on an n(+)-Si (001) substrate. Direct-bandgap electroluminescence from the MQWs light emitting diode was observed at room temperature. The quantum confinement effect of the direct-bandgap transitions is in good agreement with the theoretical calculated results. The redshift mechanism of emission wavelength related to the thermal effect is discussed.

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页数：4

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