Competing terahertz radiation mechanisms in semi-insulating InP at high-density excitation

被引:44
作者
Nakajima, M [1 ]
Oda, Y [1 ]
Suemoto, T [1 ]
机构
[1] Univ Tokyo, Inst Solid State Phys, Chiba 2778581, Japan
关键词
D O I
10.1063/1.1796532
中图分类号
O59 [应用物理学];
学科分类号
摘要
The excitation density dependence of the terahertz radiation from a semi-insulating InP surface was investigated in detail. By changing the excitation density, substantial changes were observed in the wave form with a reversal of the polarity of the radiation field. Different azimuthal angle dependence was also observed for low- and high-density excitations. These facts indicate that three different radiation mechanisms coexist and that the dominant radiation mechanism changes with increasing the excitation density from the drift current, for low-excitation density, to the diffusion current and the optical rectification, for high-excitation density. (C) 2004 American Institute of Physics.
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页码:2694 / 2696
页数:3
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