Stress effects on Al and Al(Cu) thin film grain-boundary diffusion

被引：0

作者：

Liu, XY ^{[1
]}

Liu, CL ^{[1
]}

机构：

[1] Motorola Inc, Los Alamos, NM 87545 USA

来源：

THIN FILMS-STRESSES AND MECHANICAL PROPERTIES VIII | 2000年 / 594卷

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D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Stress effects on grain-boundary diffusion in Al and AI(Cu) thin films are evaluated through atomistic simulations. Specifically, the grain-boundary vacancy formation and migration and interstitial migration energetics are obtained as a function of stress states in thin film. In general, the activation energies vary at a rate of 0.1 eV per 1.0 % strain at the grain boundary investigated, indicating the possible impact on electromigration phenomenon in these films.

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页码：451 / 456

页数：6

相关论文

共 9 条

[1] Thermodynamics of diffusion under pressure and stress: Relation to point defect mechanisms [J].

Aziz, MJ .

APPLIED PHYSICS LETTERS, 1997, 70 (21) :2810-2812

[2] SEMIEMPIRICAL, QUANTUM-MECHANICAL CALCULATION OF HYDROGEN EMBRITTLEMENT IN METALS [J].

DAW, MS ;

BASKES, MI .

PHYSICAL REVIEW LETTERS, 1983, 50 (17) :1285-1288

[3] INTERATOMIC POTENTIALS FROM 1ST-PRINCIPLES CALCULATIONS - THE FORCE-MATCHING METHOD [J].

ERCOLESSI, F ;

ADAMS, JB .

EUROPHYSICS LETTERS, 1994, 26 (08) :583-588

[4]

FOILES SM, 1992, PHYS REV B, V41, P7892

[5] Critical length and resistance saturation effects in Al(Cu) interconnects [J].

Gall, M ;

Müller, J ;

Jawarani, D ;

Capasso, C ;

Hernandez, R ;

Kawasaki, I .

MATERIALS RELIABILITY IN MICROELECTRONICS VIII, 1998, 516 :231-236

[6] Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set [J].

Kresse, G ;

Furthmuller, J .

PHYSICAL REVIEW B, 1996, 54 (16) :11169-11186

[7]

KWOK TK, 1992, P SPIE INT SOC OPTIC, V1805, P180

[8] Defect generation and diffusion mechanisms in Al and Al-Cu [J].

Liu, CL ;

Liu, XY ;

Borucki, LJ .

APPLIED PHYSICS LETTERS, 1999, 74 (01) :34-36

[9] A new investigation of copper's role in enhancing Al-Cu interconnect electromigration resistance from an atomistic view [J].

Liu, XY ;

Liu, CL ;

Borucki, LJ .

ACTA MATERIALIA, 1999, 47 (11) :3227-3231