Sol-gel deposition and piezoelectric properties of {110}-oriented Pb(Zr0.52Ti0.48)O3 thin films

被引：25

作者：

Ambika, D. ^{[1
]}

Kumar, Viswanathan ^{[1
]}

Imai, Hideyuki ^{[2
]}

Kanno, Isaku ^{[2
]}

机构：

[1] Minist Commun & Informat Technol Govt India, Sci Soc, Dept Informat Technol, C MET, Trichur 680771, Kerala, India

[2] Kyoto Univ, Kyoto 6068501, Japan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 03期

关键词：

dielectric losses; permittivity; piezoelectric materials; piezoelectric thin films; piezoelectricity; sol-gel processing; spin coating; texture; CHEMICAL SOLUTION DEPOSITION; ACTUATORS;

D O I：

10.1063/1.3293446

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pb(ZrxTi1-x)O-3 [PZT] thin films of thickness 2.0 mu m were fabricated on silicon substrates (111)Pt/Ti/SiO2/Si using a sol-gel spin-coating technique. PZT films on substrates with a strontium titanate bottom layer are preferentially {110}-oriented with a columnar structure. The PZT films exhibit good dielectric properties with a dielectric permittivity, epsilon(r)=1545 and dielectric loss, tan delta=0.04. Excellent piezoelectric characteristics are also exhibited by the {110}-oriented films with an average effective transverse piezocoefficient, e(31)(*) of -8.4 C/m(2). The influence of film texture and composition on the transverse piezocoefficient have also been studied.

引用

页数：3

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