Electron Versus Hole Extraction: Self Doping Induced Performance Bottleneck in Perovskite Solar Cells

被引:6
作者
Chatterji, Nithin [1 ]
Nair, Pradeep R. [1 ]
机构
[1] Indian Inst Technol, Dept Elect Engn, Mumbai 400076, Maharashtra, India
关键词
Doping; Performance evaluation; Photovoltaic cells; Charge carrier processes; Degradation; Numerical simulation; Numerical stability; Semiconductor device modeling; photovoltaic cells; HALIDE PEROVSKITES;
D O I
10.1109/LED.2019.2944474
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Efficient and balanced collection of photo-generated charge carriers is a fundamental requirement for high efficiency solar cells - including perovskites. Any process or bias induced asymmetry in carrier collection leads to degradation in efficiency. Here, for the first time, we show that process induced self-doping in the perovskite active layer could result in asymmetric carrier collection. Accordingly, interface quality at the majority carrier collection layer becomes the performance limiting factor in perovskite solar cells. Through detailed numerical simulations we identify optimization schemes to overcome the ill-effects due to self-doping and interface recombination. Further, the insights on asymmetric carrier collection has interesting implications on regular vs. inverted geometry and long term stability of perovskite solar cells - which could be of broad interest to the community.
引用
收藏
页码:1784 / 1787
页数:4
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