Enhanced direct interband transitions in silicon nanowires studied by electron energy-loss spectroscopy

被引：15
作者：
Kikkawa, J.
Takeda, S.
Sato, Y.
Terauchi, M.
机构：
[1] Osaka Univ, Dept Phys, Grad Sch Sci, Toyonaka, Osaka 5600043, Japan
[2] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Aoba Ku, Sendai, Miyagi 9808577, Japan
来源：
PHYSICAL REVIEW B | 2007年 / 75卷 / 24期
关键词：
D O I：
10.1103/PhysRevB.75.245317
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have experimentally observed abnormally enhanced direct interband transitions in silicon nanowires covered with SiO2 layers by means of electron energy-loss spectroscopy (EELS). Core-diameter dependence of the EELS spectra was systematically studied. It was clarified that both E-1 and E-2 direct interband transitions of Si core are explicitly enhanced, owing to monopolar surface plasmons at a Si/SiO2 interface whenever core diameter is small. We also discuss the effects of thickness of the oxide layers on the direct interband transitions.
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页数：5
相关论文
共 27 条
[1]   Electron energy loss spectroscopy measurement of the optical gaps on individual boron nitride single-walled and multiwalled nanotubes -: art. no. 127601 [J].
Arenal, R ;
Stéphan, O ;
Kociak, M ;
Taverna, D ;
Loiseau, A ;
Colliex, C .
PHYSICAL REVIEW LETTERS, 2005, 95 (12)
[2]  
Arfken G., 1970, MATH METHODS PHYS
[3]   DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].
ASPNES, DE ;
STUDNA, AA .
PHYSICAL REVIEW B, 1983, 27 (02) :985-1009
[4]   Surface plasmon subwavelength optics [J].
Barnes, WL ;
Dereux, A ;
Ebbesen, TW .
NATURE, 2003, 424 (6950) :824-830
[5]   ELECTRON-ENERGY LOSSES IN SILICON - BULK AND SURFACE PLASMONS AND CERENKOV RADIATION [J].
CHEN, CH ;
SILCOX, J ;
VINCENT, R .
PHYSICAL REVIEW B, 1975, 12 (01) :64-71
[6]  
Cheynet MC, 2004, PHILOS MAG, V84, P1753, DOI [10.1080/14786430310001659507, 10.1080/1478643031001659507]
[7]  
Egerton R. F., 1996, ELECT ENERGY LOSS SP
[8]   Interband transitions of crystalline and amorphous SiO2:: An electron energy-loss spectroscopy (EELS) study of the low-loss region [J].
Garvie, LAJ ;
Rez, P ;
Alvarez, JR ;
Buseck, PR .
SOLID STATE COMMUNICATIONS, 1998, 106 (05) :303-307
[9]   A comprehensive study of electron energy losses in Ge nanowires [J].
Hanrath, T ;
Korgel, BA .
NANO LETTERS, 2004, 4 (08) :1455-1461
[10]   Growth rate of silicon nanowires [J].
Kikkawa, J ;
Ohno, Y ;
Takeda, S .
APPLIED PHYSICS LETTERS, 2005, 86 (12) :1-3
123