Characterization of chemically-deposited NiB and NiWB thin films as a capping layer for ULSI application

被引：46
作者：
Osaka, T
Takano, N
Kurokawa, T
Kaneko, T
Ueno, K
机构：
[1] Waseda Univ, Dept Appl Chem, Shinjuku Ku, Tokyo 1698555, Japan
[2] Waseda Univ, Kagami Mem Lab Mat Sci & Technol, Shinjuku Ku, Tokyo 1690051, Japan
[3] NEC Corp Ltd, ULSI Device Dev Div, Sagamihara, Kanagawa 2291198, Japan
来源：
SURFACE & COATINGS TECHNOLOGY | 2003年 / 169卷
基金：
日本学术振兴会;
关键词：
electroless deposition; capping layer; Ni-B alloy; thermal stability;
D O I：
10.1016/S0257-8972(03)00186-5
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
NiB and NiWB films fabricated by electroless deposition were evaluated aiming for the application to a metal cap in the copper interconnects technology. The content of B and W was varied by adjusting the concentration of components in electroless deposition baths in order to clarify the effect of co-deposited element on thermal stability of the films. The thermal stability was evaluated by Auger electron spectroscope, X-ray diffractometer (XRD) and sheet resistance measurement. By measuring the variation in sheet resistance with annealing temperature, it was confirmed that the NiB films showed good thermal stability up to 450 degreesC, whereas the NiWB films deteriorated at 300 degreesC. The effect of co-deposited element was discussed based on the results obtained by XRD as well as that of sheet resistance measurement. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：124 / 127
页数：4
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