The Synthesis of Silicon Carbide in Rhombohedral Form with Different Chemicals

被引:2
作者
Kariper, I. Afsin [1 ]
机构
[1] Erciyes Univ, Dept Sci Educ, Fac Educ, TR-38039 Kayseri, Turkey
来源
METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE | 2017年 / 48A卷 / 06期
关键词
CARBON; DEPOSITION; DIAMOND; POLYMER;
D O I
10.1007/s11661-017-4050-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This study describes the attempt at producing silicon carbide using a simpler and less costly method. Within the study, XRD, EDX, and FTIR analyses were performed to determine the structural properties of the product, and SEM analyses were used to identify its surface properties. The characteristics such as porosity and surface area were determined through BET analysis. The starting reagents were compared with the product using FTIR analysis, whereas the product was compared with a sample of SiC procured from a supplier who manufactures high-purity products through BET analysis. In EDX analysis, approximately 72 pct Si and 28 pct C were identified. The vibrational peaks of the synthesized product (characteristics Si-C bonds) were observed at around 1076 cm(-1) (FTIR analysis). At the same time, the outcomes were compared with major publications in the literature.
引用
收藏
页码:3108 / 3112
页数:5
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