Effects of In profile on simulations of InGaN/GaN multi-quantum-well light-emitting diodes

被引：26

作者：

McBride, Patrick M. ^{[1
]}

Yan, Qimin ^{[1
,2
]}

Van de Walle, Chris G. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Mol Foundry, Berkeley, CA 94720 USA

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 08期

关键词：

POLARIZATION;

D O I：

10.1063/1.4894464

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the impact of incorporating realistic In profiles in simulations of c-plane InGaN/GaN light-emitting diodes. Simulations based on a drift-diffusion model typically overestimate the onset voltage, but have usually been based on the assumption of ideal quantum wells with a square In profile. We demonstrate that more realistic profiles lead to significant modifications of currentdensity-versus-voltage characteristics, and explain the effects based on changes in the band diagram and carrier overlap. (C) 2014 AIP Publishing LLC.

引用

页数：3

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