Preparation and annealing of GaN/Cu core-shell nanowires

被引：8

作者：

Kim, Hyoun Woo ^{[1
]}

Kim, Hyo Sung ^{[1
]}

Na, Han Gil ^{[1
]}

Yang, Ju Chan ^{[1
]}

Lee, Chongmu ^{[1
]}

机构：

[1] Inha Univ, Div Mat Sci & Engn, Inchon 402751, South Korea

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2010年 / 500卷 / 02期

关键词：

GaN; Nanowires; Cu; Plasma sputtering; Thermal annealing; RED LUMINESCENCE; PHOTOLUMINESCENCE; NANOSTRUCTURES; FABRICATION; EFFICIENT; VACANCIES; GROWTH;

D O I：

10.1016/j.jallcom.2010.03.234

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

GaN-core/Cu-shell nanowires were prepared and their annealing behavior was investigated. The thermal annealing induced the surface-roughening of the hetero-nanowires due to the agglomeration and generation of cluster-like structures from the Cu-shell layers. X-ray diffraction suggested that the thermal annealing generated CuOx phases. The core GaN nanowires exhibited weak ferromagnetism at 5K and their coercivity was increased by Cu-sputtering and subsequent thermal annealing at 800 degrees C. In the Gaussian deconvolution studies, the photoluminescence (PL) spectra exhibited emission bands centered at 2.0 and 3.2 eV, irrespective of the Cu-coating and/or thermal annealing. A mechanism is proposed to explain the significant change in the intensity of the ultraviolet (UV) emission by the combination of Cu-sputtering and annealing at 1000 degrees C. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：175 / 180

页数：6

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