Self-assembly surface modified indium-tin oxide anodes for single-layer light-emitting diodes

被引：38
作者：
Morgado, J
Barbagallo, N
Charas, A
Matos, M
Alcácer, L
Cacialli, F
机构：
[1] Inst Super Tecn, Inst Telecomun, P-1049001 Lisbon, Portugal
[2] Inst Super Tecn, Dept Engn Quim, P-1049001 Lisbon, Portugal
[3] Inst Tecnol & Nucl, Dept Quim, P-2686953 Sacavem, Portugal
[4] Inst Super Engn Lisboa, Dept Engn Quim, P-1949001 Lisbon, Portugal
[5] UCL, Dept Phys & Astron, London WC1E 6BT, England
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2003年 / 36卷 / 05期
关键词：
D O I：
10.1088/0022-3727/36/5/304
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We study the effect of indium-tin oxide surface modification by self assembling of highly polar molecules on the performance of single-layer light-emitting diodes (LEDs) fabricated with polyfluorene blends and aluminium cathodes. We find that the efficiency and light-output of such LEDs is comparable to, and sometimes better than, the values obtained for LEDs incorporating a hole injection layer of poly(3,4-ethylene dioxythiophene) doped with polystyrene sulphonic acid. This effect is attributed to the dipole-induced work function modification of indium-tin oxide.
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页码：434 / 438
页数：5
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