Effects of dopants on the amorphous-to-fcc transition in Ge2Sb2Te5 thin films

被引：26

作者：

Privitera, S.

Rimini, E.

Bongiorno, C.

Pirovano, A.

Bez, R.

机构：

[1] STMicroelect, MPA Grp, R&D Dept, I-95121 Catania, Italy

[2] CNR, IMM, I-95121 Catania, Italy

[3] STMicroelect, NVMTD, Adv R&D, FTM, I-20041 Agrate Brianza, MI, Italy

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2007年 / 257卷

关键词：

doping; phase transitions; phase change memories;

D O I：

10.1016/j.nimb.2007.01.265

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The amorphous-to-crystal transition has been studied through in situ resistance measurements in Ge2Sb2Te5 thin films doped by ion implantation with nitrogen, oxygen or fluorine at different concentrations. Enhancement of the thermal stability has been observed in O and N amorphous doped Ge2Sb2Te5. Larger effects have been found in the case of nitrogen doping. On the contrary, doping with Fluorine produced a decrease in the crystallization temperature. The electrical properties have been related to the structural phase change through in situ transmission electron microscopy analysis. The comparison between undoped and doped Ge2Sb2Te5 shows that the introduction of oxygen or nitrogen modifies in a different way the kinetics of the amorphous-to-fcc transition and gives new insight on the effects of doping with light elements in GeSbTe alloys. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：352 / 354

页数：3

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