Characterisation of the interface states between amorphous diamond-like carbon films and (100) silicon

被引：0

作者：

Konofaos, N ^{[1
]}

McClean, IP ^{[1
]}

Thomas, CB ^{[1
]}

机构：

[1] UNIV BRADFORD, DEPT ELECT & ELECT ENGN, BRADFORD BD7 1DP, W YORKSHIRE, ENGLAND

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1997年 / 161卷 / 01期

关键词：

D O I：

10.1002/1521-396X(199705)161:1<111::AID-PSSA111>3.0.CO;2-U

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Amorphous diamond-like carbon films were grown onto (100) Si substrates using rf plasma CVD of methane. Then the interface states were examined using the conductance technique. Metal-insulator-semiconductor (MIS) devices were made and proper modeling was used. The statistical model was used to fit the experimental data and calculate the density of interface states. The technique revealed a density of interface states between 10(11) and 10(12) eV(-1) cm(-2). Subsequent thermal annealing reduced this density.

引用

页码：111 / 123

页数：13

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