Effect of InGaAs capping layer on the properties of InAs/InGaAs quantum dots and lasers

被引：47

作者：

Chang, FY ^{[1
]}

Wu, CC

Lin, HH

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10764, Taiwan

[2] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10764, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 25期

关键词：

D O I：

10.1063/1.1585125

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the effects of In0.33Ga0.67As capping layers on the structural and optical properties of InAs self-organized quantum dots grown by gas-source molecular-beam epitaxy. With different deposition methods for the InGaAs capping layer, the quantum-dot density can be adjusted from 2.3x10(10) to 1.7x10(11) cm(-2). As-cleaved 3.98-mm-long diode laser using triple stacks of InAs quantum dots with the capping layer grown by GaAs/InAs sequential binary growth demonstrates an emission wavelength of 1305 nm and a threshold current density of 360 A/cm(2). A ground-state saturation gain of 16.6 cm(-1) is achieved due to the high dot density. (C) 2003 American Institute of Physics.

引用

页码：4477 / 4479

页数：3

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