The transparent NiO film ohmic contact to p-type and unintentionally doped In0.53Ga0.47As

被引：2
作者：
Yang, Dan [1 ]
Huang, Yongqing [1 ]
Liu, Kai [1 ]
Duan, Xiaofeng [1 ]
Yang, Yisu [1 ]
Ren, Xiaomin [1 ]
机构：
[1] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2021年 / 131卷
关键词：
NiO; Ohmic contact; III-V semiconductors; POWER; BAND;
D O I：
10.1016/j.mssp.2021.105855
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The NiO thin film ohmic contact to the p-type In0.53Ga0.47As and non-doped In0.53Ga0.48As was experimentally demonstrated. The ohmic contact mechanism is mainly due to the small valence band offset between the NiO and InGaAs. The NiO thin film was synthesized through thermal oxidation. The oxidation time is the key factor affecting the contact properties of the NiO/InGaAs. It is promising for the application of NiO transparent electrodes in III-V compound material-based optical-electronic devices.
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页数：7
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