Electrical properties and transport mechanisms in Ge-Sb-Te thin films

被引：0

作者：

Lazarenko, P. ^{[1
]}

Sherchenkov, A. ^{[1
]}

Kozyukhin, S. ^{[2
,3
]}

Babich, A. ^{[1
]}

Timoshenkov, S. ^{[1
]}

Shuliatyev, A. ^{[1
]}

Kudoyarova, V. ^{[4
]}

机构：

[1] Natl Res Univ Elect Technol, Bld 1 Shokin Sq, Moscow 124498, Russia

[2] RAS, Kurnakov Inst Gen & Inorgan Chem, Leninsky Pr 31, Moscow 119991, Russia

[3] Natl Res Tomsk State Univ, Dept Chem, Tomsk 634050, Russia

[4] RAS, Ioffe Phys Tech Inst, Politekh Skaya 26, St Petersburg 194021, Russia

来源：

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2016年 / 18卷 / 1-2期

关键词：

Phase change memory; Ge-Sb-Te; Electrical properties; Transport mechanisms; CHARGE-LIMITED CURRENTS; PHASE;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Influence of the composition variation along the quasi-binary line GeTe-Sb2Te3 on the transport mechanisms of thin films.vas investigated. Three regions with different current-voltage dependencies were established. Composition dependence of the energy diagrams was analyzed. Position of the trap levels controlling transport mechanisms, and density of traps were estimated. Obtained results showed that electrical properties of thin films can be sufficiently varied with moving along the quasi-binary line, which is important for the optimization of PCM technology.

引用

页码：50 / 55

页数：6

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