Measurement of small-signal and large-signal responses of packaged laser modules at high temperature

被引:8
作者
Zhu, Ning Hua [1 ]
Wen, Ji Min [1 ]
Song, Hai Peng [1 ]
Zhang, Shang Jian [1 ]
Xie, Liang [1 ]
机构
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
基金
中国国家自然科学基金;
关键词
chip temperature; small-signal characteristics; large-signal performance; pulse injection; semiconductor laser;
D O I
10.1007/s11082-006-9039-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, the pulsed injection method is extended to measure the chip temperature of various packaged laser modules, such as the DFB laser modules, the FP laser modules, and the EML laser modules. An optimal injection condition is obtained by investigating the dependence of the lasing wavelength on the width and period of the injection pulse in a relatively wide temperature range. The small-signal frequency responses and large-signal performances of packaged laser modules at different chip temperature are measured. The adiabatic small-signal modulation characteristics of packaged LD are first extracted. In the large-signal measurement, the effects of chip temperature, bias current and driving signal on the performances of the laser modules are discussed. It has been found that the large-signal performances of the EML modules depend on the different red-shift speeds of the DFB and EAM sections as chip temperature varying, and the optimal characteristics may be achieved at higher temperature.
引用
收藏
页码:1245 / 1257
页数:13
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