Nanoscale Structural Engineering via Phase Segregation: Au-Ge System

被引：22

作者：

Chueh, Yu-Lun ^{[1
,3
,4
]}

Boswell, Cosima N. ^{[2
,3
]}

Yuan, Chun-Wei ^{[2
,3
]}

Shin, Swanee J. ^{[2
,3
]}

Takei, Kuniharu ^{[1
,3
,4
]}

Ho, Johnny C. ^{[1
,3
,4
]}

Ko, Hyunhyub ^{[1
,3
,4
]}

Fan, Zhiyong ^{[1
,3
,4
]}

Haller, E. E. ^{[2
,3
]}

Chrzan, D. C. ^{[2
,3
]}

Javey, Ali ^{[1
,3
,4
]}

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

[3] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

[4] Univ Calif Berkeley, Berkeley Sensor & Actuator Ctr, Berkeley, CA 94720 USA

来源：

NANO LETTERS | 2010年 / 10卷 / 02期

关键词：

Phase segregation; nanowires; nanoscale diffusion; supercooling; SEMICONDUCTOR NANOWIRES; GROWTH;

D O I：

10.1021/nl902597m

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A tunable structural engineering of nanowires based on template-assisted alloying and phase segregation processes is demonstrated. The Au-Ge system, which has a low eutectic temperature and negligible solid solubility (< 10(-3) atom %)of Au in Ge at low temperatures, is utilized. Depending on the Au concentration of the initial nanowires, final structures ranging from nearly periodic nanodisk patterns to core/shell and fully alloyed nanowires are produced. The formation mechanisms are discussed in detail and characterized by in situ transmission electron microscopy and energy-dispersive spectrometry analyses. Electrical measurements illustrate the metallic and semiconducting characteristics of the fully alloyed and alternating Au/Ge nanodisk structures, respectively.

引用

页码：393 / 397

页数：5

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