CMOS compatible fast switching RF MEMS varactors

被引：0

作者：

Lacroix, B. ^{[1
]}

Pothier, A. ^{[1
]}

Crunteanu, A. ^{[1
]}

Cibert, C. ^{[2
]}

Dumas-Bouchiat, CibereF. ^{[2
]}

Champeaux, C. ^{[2
]}

Catherinot, A. ^{[2
]}

Blondy, P. ^{[1
]}

机构：

[1] XLIM Res Inst, 123 Av Albert Thomas, F-87060 Limoges, France

[2] SPCTS Res Inst, F-87060 Limoges, France

来源：

2006 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-4 | 2006年

关键词：

high-speed integrated circuits; RF MEMS; varactors;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents fast switching RF-MEMS CMOS compatible varactors. By introducing bended sides on a conventional air bridge, it is shown experimentally that the resonance frequency of aluminum bridges is increased by a factor 2.5. Based on miniature bridges design (around ten times smaller than standard MEMS varactors), presented devices allow to reach higher mechanical resonance frequencies, resulting in faster switching times. Several designs an presented with recorded resonance frequencies between 1 and 3 MHz and measured switching time under 600 ns.

引用

页码：1720 / +

页数：2

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