Activated graphene nanoplatelets as a counter electrode for dye-sensitized solar cells
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作者:
Gong, Jiawei
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S Dakota State Univ, Ctr Adv Photovolta, Dept Elect Engn, Brookings, SD 57007 USA
N Dakota State Univ, Dept Mech Engn, Fargo, ND 58102 USAS Dakota State Univ, Ctr Adv Photovolta, Dept Elect Engn, Brookings, SD 57007 USA
Gong, Jiawei
[1
,2
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Zhou, Zhengping
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S Dakota State Univ, Ctr Adv Photovolta, Dept Elect Engn, Brookings, SD 57007 USAS Dakota State Univ, Ctr Adv Photovolta, Dept Elect Engn, Brookings, SD 57007 USA
Zhou, Zhengping
[1
]
Sumathy, K.
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N Dakota State Univ, Dept Mech Engn, Fargo, ND 58102 USAS Dakota State Univ, Ctr Adv Photovolta, Dept Elect Engn, Brookings, SD 57007 USA
Sumathy, K.
[2
]
Yang, Huojun
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N Dakota State Univ, Dept Construct Management & Engn, Fargo, ND 58102 USAS Dakota State Univ, Ctr Adv Photovolta, Dept Elect Engn, Brookings, SD 57007 USA
Yang, Huojun
[3
]
Qiao, Qiquan
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S Dakota State Univ, Ctr Adv Photovolta, Dept Elect Engn, Brookings, SD 57007 USAS Dakota State Univ, Ctr Adv Photovolta, Dept Elect Engn, Brookings, SD 57007 USA
Qiao, Qiquan
[1
]
机构:
[1] S Dakota State Univ, Ctr Adv Photovolta, Dept Elect Engn, Brookings, SD 57007 USA
[2] N Dakota State Univ, Dept Mech Engn, Fargo, ND 58102 USA
[3] N Dakota State Univ, Dept Construct Management & Engn, Fargo, ND 58102 USA
Activated graphene nanoplatelets (aGNPs) prepared by a hydrothermal method using KOH as activating agent were used as counter electrode for high efficiency dye-sensitized solar cells (DSSCs). After the KOH activation, the scanning electron microscopy image shows that aGNPs demonstrate a more curled, rough, and porous morphology which could contain both micro- and mesopores. The KOH activation changed the stacked layers of GNPs to a more crumpled and curved morphology. The microstructure of large pores significantly increased the electrode surface area and roughness, leading to the high electrocatalytic activity for triiodide reduction at the counter electrode. The DSSCs fabricated using aGNP as counter electrodes were tested under standard AM 1.5 illumination with an intensity of 91.5 mW/cm(2). The device achieved an overall power conversion efficiency of 7.7%, which is comparable to the conventional platinum counter electrode (8%). Therefore, the low cost and high performance aGNP based counter electrode is a promising alternative to conventional Pt counter electrode in DSSCs. (C) 2016 AIP Publishing LLC.
机构:
E China Normal Univ, Engn Res Ctr Nanophoton & Adv Instrument, Minist Educ, Dept Phys, Shanghai 200062, Peoples R China
Singapore Polytech, Ctr Adv Mat Technol, Singapore 139651, SingaporeE China Normal Univ, Engn Res Ctr Nanophoton & Adv Instrument, Minist Educ, Dept Phys, Shanghai 200062, Peoples R China
Zhang, D. W.
Li, X. D.
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E China Normal Univ, Engn Res Ctr Nanophoton & Adv Instrument, Minist Educ, Dept Phys, Shanghai 200062, Peoples R ChinaE China Normal Univ, Engn Res Ctr Nanophoton & Adv Instrument, Minist Educ, Dept Phys, Shanghai 200062, Peoples R China
Li, X. D.
Li, H. B.
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E China Normal Univ, Engn Res Ctr Nanophoton & Adv Instrument, Minist Educ, Dept Phys, Shanghai 200062, Peoples R ChinaE China Normal Univ, Engn Res Ctr Nanophoton & Adv Instrument, Minist Educ, Dept Phys, Shanghai 200062, Peoples R China
Li, H. B.
Chen, S.
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E China Normal Univ, Engn Res Ctr Nanophoton & Adv Instrument, Minist Educ, Dept Phys, Shanghai 200062, Peoples R ChinaE China Normal Univ, Engn Res Ctr Nanophoton & Adv Instrument, Minist Educ, Dept Phys, Shanghai 200062, Peoples R China
Chen, S.
Sun, Z.
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E China Normal Univ, Engn Res Ctr Nanophoton & Adv Instrument, Minist Educ, Dept Phys, Shanghai 200062, Peoples R ChinaE China Normal Univ, Engn Res Ctr Nanophoton & Adv Instrument, Minist Educ, Dept Phys, Shanghai 200062, Peoples R China
Sun, Z.
Yin, X. J.
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Singapore Polytech, Ctr Adv Mat Technol, Singapore 139651, SingaporeE China Normal Univ, Engn Res Ctr Nanophoton & Adv Instrument, Minist Educ, Dept Phys, Shanghai 200062, Peoples R China
Yin, X. J.
Huang, S. M.
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E China Normal Univ, Engn Res Ctr Nanophoton & Adv Instrument, Minist Educ, Dept Phys, Shanghai 200062, Peoples R ChinaE China Normal Univ, Engn Res Ctr Nanophoton & Adv Instrument, Minist Educ, Dept Phys, Shanghai 200062, Peoples R China
机构:
Indian Inst Technol, Dept Met Engn & Mat Sci, Mumbai 400076, Maharashtra, IndiaIndian Inst Technol, Dept Met Engn & Mat Sci, Mumbai 400076, Maharashtra, India
Nemala, Siva Sankar
Kartikay, Purnendu
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Indian Inst Technol, Dept Met Engn & Mat Sci, Mumbai 400076, Maharashtra, IndiaIndian Inst Technol, Dept Met Engn & Mat Sci, Mumbai 400076, Maharashtra, India
Kartikay, Purnendu
Prathapani, Sateesh
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Indian Inst Technol, Dept Met Engn & Mat Sci, Mumbai 400076, Maharashtra, IndiaIndian Inst Technol, Dept Met Engn & Mat Sci, Mumbai 400076, Maharashtra, India
Prathapani, Sateesh
Bohm, H. L. Mallika
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Univ Warwick Sci Pk, Tata Steel R&D, Sir William Lyons Rd, Coventry CV4 7EZ, W Midlands, EnglandIndian Inst Technol, Dept Met Engn & Mat Sci, Mumbai 400076, Maharashtra, India
Bohm, H. L. Mallika
Bhargava, Parag
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Indian Inst Technol, Dept Met Engn & Mat Sci, Mumbai 400076, Maharashtra, IndiaIndian Inst Technol, Dept Met Engn & Mat Sci, Mumbai 400076, Maharashtra, India
Bhargava, Parag
Bohm, Sivasambu
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Indian Inst Technol, Dept Met Engn & Mat Sci, Mumbai 400076, Maharashtra, India
Talga Technol Ltd UK, Future Business Ctr, King Hedges Rd, Cambridge CB4 2HY, EnglandIndian Inst Technol, Dept Met Engn & Mat Sci, Mumbai 400076, Maharashtra, India
Bohm, Sivasambu
Mallick, Sudhanshu
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Indian Inst Technol, Dept Met Engn & Mat Sci, Mumbai 400076, Maharashtra, IndiaIndian Inst Technol, Dept Met Engn & Mat Sci, Mumbai 400076, Maharashtra, India