Pulsed laser deposition of phosphor nitride thin films

被引：0

作者：

Kotlyarchuk, B ^{[1
]}

Popovych, D ^{[1
]}

机构：

[1] Natl Acad Sci Ukraine, Pidstryhach Inst Appl Problems Mech & Math, UA-290601 Lviv, Ukraine

来源：

OPTOELECTRONIC AND HYBRID OPTICAL/DIGITAL SYSTEMS FOR IMAGE AND SIGNAL PROCESSING | 2000年 / 4148卷

关键词：

phosphor compound film; laser irradiation; pulsed laser deposition; luminescence;

D O I：

10.1117/12.388454

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we report on the results of experimental investigations of processes of pulse laser reactive deposition and structure formation and characteristics of AlN, AlN:Mn, GaN, GaN:Zn, GaN:Mn, GaN:Cr, MgSiN2:Ti, SrSiN2:Eu thin films which have been condensed from laser erosion plasma into reactive atmosphere (nitrogen).

引用

页码：247 / 251

页数：3