Simulation of the dark current of quantum-well infrared photodetectors

被引：1

作者：

Claro, M. S. ^{[1
]}

Fernandes, F. M. ^{[2
]}

da Silva, E. C. F. ^{[1
]}

Quivy, A. A. ^{[1
]}

机构：

[1] Univ Sao Paulo, Inst Fis, LNMS, Rua Matao 1371, BR-05508090 Sao Paulo, SP, Brazil

[2] Univ Estado Rio de Janeiro, Fac Engn, Campus Maracana, BR-20550013 Rio De Janeiro, RJ, Brazil

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2017年 / 104卷

关键词：

SELF-CONSISTENT MODEL; FOCAL-PLANE ARRAYS; ELECTRON-MOBILITY; GAAS; SEMICONDUCTORS; ALXGA1-XAS; BAND; SEGREGATION; TRANSPORT; ALLOYS;

D O I：

10.1016/j.spmi.2017.02.015

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We developed a method to calculate the dark current of quantum-well infrared photo detectors without the need to fit any experimental data or to perform extra transport measurements on other samples. The temperature range of the calculations was extended below 30 K by combining a thermionic model valid at high temperature and a miniband-transport model valid at low temperature whenever any superlattice characteristics were relevant in the device. (C) 2017 Elsevier Ltd. All rights reserved.

引用

页码：232 / 239

页数：8

共 31 条

[1] Temperature and electric field dependences of the mobility of electrons in vertical transport in GaAs/Ga1-yAlyAs barrier structures containing quantum wells [J].

Altunoez, Safi ;

Celik, Huesyin ;

Cankurtaran, Mehmet .

CENTRAL EUROPEAN JOURNAL OF PHYSICS, 2008, 6 (03) :479-490

[2] A ground miniband width of a superlattice with rectangular quantum wells versus constructive parameters [J].

S. I. Borisenko .

Russian Physics Journal, 2003, 46 (10) :1034-1036

[3] Nonuniform segregation of Ga at AlAs/GaAs heterointerfaces [J].

Braun, W ;

Trampert, A ;

Daweritz, L ;

Ploog, KH .

PHYSICAL REVIEW B, 1997, 55 (03) :1689-1695

[4] Carrier transport simulation for bulk AlxGa1-xAs with a Gamma-L-X band structure based on Lei-Ting balance equations [J].

Cao, JC ;

Lei, XL .

SOLID-STATE ELECTRONICS, 1996, 39 (07) :971-975

[5] Modeling of dark current in midinfrared quantum well infrared photodetectors [J].

Castellano, Fabrizio ;

Rossi, Fausto ;

Faist, Jerome ;

Lhuillier, Emmanuel ;

Berger, Vincent .

PHYSICAL REVIEW B, 2009, 79 (20)

[6] CONTACT AND DISTRIBUTED EFFECTS IN QUANTUM-WELL INFRARED PHOTODETECTORS [J].

ERSHOV, M ;

RYZHII, V ;

HAMAGUCHI, C .

APPLIED PHYSICS LETTERS, 1995, 67 (21) :3147-3149

[7] SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS [J].

ESAKI, L ;

TSU, R .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (01) :61-&

[8] MOBILITY OF ELECTRONS IN COMPENSATED SEMICONDUCTORS .2. THEORY [J].

FALICOV, LM ;

CUEVAS, M .

PHYSICAL REVIEW, 1967, 164 (03) :1025-&

[9]

Grahn H.T., 1995, SEMICONDUCTOR SUPERL

[10]

Grundmann M, 2010, GRAD TEXTS PHYS, P1, DOI 10.1007/978-3-642-13884-3_1

← 1 2 3 4 →