Fermi-edge singularity in p-type modulation-doped SiGe quantum wells

被引：3

作者：

Buyanova, IA

Chen, WM

Henry, A

Ni, WX

Hansson, GV

机构：

[1] Department of Physics and Measurement Technology, Linköping University

来源：

PHYSICAL REVIEW B | 1996年 / 53卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.53.R1701

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A strong effect of p-type modulation doping on the radiative recombination in Si/Si1-xGex/Si quantum wells is observed by photoluminescence (PL) spectroscopy. The filling of the Si-Ge quantum wells due to the charge transfer of holes from the B modulation doping in the adjacent Si layers causes an appearance of a broad asymmetric PL band with a characteristic sharp high-energy cutoff. A strong enhancement near the Fermi edge is shown, by varying structure parameters and experimental conditions, to correspond to the Fermi-edge singularity. Experimental evidence on the dominant mechanism responsible for the Fermi-edge singularity is given as due to a nearly resonant scattering between the electronic states near the Fermi energy and the next unoccupied subband of the two-dimensional hole gas.

引用

收藏

页码：R1701 / R1704

页数：4

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