Scaling analysis of field-enhanced bandtail hopping transport in amorphous carbon nitride

被引:7
作者
Godet, C. [1 ]
Kleider, J. P.
Gudovskikh, A. S.
机构
[1] Ecole Polytech, Phys Interfaces & Couches Minces Lab, CNRS, UMR 7647, F-91128 Palaiseau, France
[2] Univ Paris 06, Supelec, Lab Genie Elect Paris, CNRS,UMR 8507, F-91192 Gif Sur Yvette, France
来源
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2007年 / 244卷 / 06期
关键词
D O I
10.1002/pssb.200642043
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Hopping transport within a bandtail distribution of localized electronic states has been investigated in amorphous carbon nitride (a-C1-xNx: H, x = 0.23) as a function of temperature T and electric field F. The conductivity sigma follows Mott's law in the ohmic regime, i.e. ln (sigma(ohmic)) varies linearly with T-1/4, while at higher field, a scaling law, ln (sigma/sigma(ohmic)) = phi[F-S/T] with S = 0.67 (+/- 0.05), is found. Data are fully consistent with a field-enhanced bandtail hopping (FBTH) model in which the effective temperature concept describes the non-equilibrium occupation probability of tail states. A "filling rate" method, considering forward non-activated hopping transitions, is developed to analyze the high field regime of FBTH. For an exponential distribution with disorder energy E-o, increasing F shifts the transport energy E-DL towards shallower tail states, with a density of states N(E-DL) similar to (F)(3) (E-o)(-4). In this model, FBTH is parametrized using ln sigma(T, F) vs T-1/4 plots, which provide field-dependent apparent values of prefactor (ln sigma(oo)) and slope (T-o(1/4)). As F increases, both parameters strongly decrease. This behavior (observed in a-C1-xNx:H, x=0.23, for F > 5 x 10(4) V cm(-1)) is a signature of band tail hopping transport. Our FBTH model predicts a minimum value sigma(oo)(min) of sigma(oo)(F), which is indeed observed in a-C1-x N-x:H (x=0.23) for T < 70 K (sigma(oo)(min) approximate to 10(-6) S cm(-1) at F-min approximate to 3 x 10(5) V cm(-1)). Near F-min, kT(eff)*=(1/kT(eff)-1/E-o)(-1) is parametrized by kT*(eff)similar to F-q. The value of q that best reproduces the experimental results, q = 0.7 +/- 0.1, is consistent with the scaling exponent S = 0.67 and with the density of states parameters deduced from the Ohmic regime. Hence, this "filling rate" method applied to FBTH transport appears to be very useful to analyze the apparent prefactor sigma(oo)(F) and to derive the effective temperature T-eff(T, F) which governs bandtail states occupation and FBTH conductivity. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:2081 / 2099
页数:19
相关论文
共 41 条
[11]   Field-enhanced electrical transport mechanisms in amorphous carbon films [J].
Godet, C ;
Kumar, S ;
Chu, V .
PHILOSOPHICAL MAGAZINE, 2003, 83 (29) :3351-3365
[12]   Variable range hopping revisited: the case of an exponential distribution of localized states [J].
Godet, C .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2002, 299 :333-338
[13]   Structural and electronic properties of electron cyclotron resonance plasma deposited hydrogenated amorphous carbon and carbon nitride films [J].
Godet, C ;
Conway, NMJ ;
Bourée, JE ;
Bouamra, K ;
Grosman, A ;
Ortega, C .
JOURNAL OF APPLIED PHYSICS, 2002, 91 (07) :4154-4162
[14]  
Godet C, 2002, PHYS STATUS SOLIDI B, V231, P499, DOI 10.1002/1521-3951(200206)231:2<499::AID-PSSB499>3.0.CO
[15]  
2-K
[16]   HOPPING MODEL FOR ACTIVATED CHARGE TRANSPORT IN AMORPHOUS SILICON [J].
GRUNEWALD, M ;
THOMAS, P .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 94 (01) :125-133
[17]   THEORY OF PHOTOLUMINESCENCE DECAY AND ELECTRIC-FIELD-DEPENDENT ENERGY RELAXATION IN DISORDERED MATERIALS AT LOW-TEMPERATURE [J].
GRUNEWALD, M ;
MOVAGHAR, B .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1989, 1 (14) :2521-2536
[18]   From Gutenberg to the global information infrastructure: Access to information in the networked world [J].
Hill, LL .
LIBRARY & INFORMATION SCIENCE RESEARCH, 2001, 23 (02) :197-200
[19]   HOPPING CONDUCTION IN AMORPHOUS SOLIDS [J].
HILL, RM .
PHILOSOPHICAL MAGAZINE, 1971, 24 (192) :1307-&
[20]  
HUNDHAUSEN M, 1996, J NONCRYST SOLIDS, V198, P230