Effect of Stacking Layers on the Structure and Properties of Ca(Mg1/3Nb2/3)O3/CaTiO3 Thin Films
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Zhou, Jing
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Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan, Peoples R ChinaWuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan, Peoples R China
Zhou, Jing
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Zhu, Jie
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Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan, Peoples R ChinaWuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan, Peoples R China
Zhu, Jie
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]
Chen, Wen
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Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan, Peoples R ChinaWuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan, Peoples R China
Chen, Wen
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]
Shen, Jie
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Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan, Peoples R ChinaWuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan, Peoples R China
Shen, Jie
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Lei, Qiong
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Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan, Peoples R ChinaWuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan, Peoples R China
Lei, Qiong
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]
He, Huimin
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Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan, Peoples R ChinaWuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan, Peoples R China
He, Huimin
[1
]
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[1] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan, Peoples R China
来源:
ASIAN CERAMIC SCIENCE FOR ELECTRONICS III AND ELECTROCERAMICS IN JAPAN XII
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2010年
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421-422卷
Effect of stacking layers on the structure and properties of Ca(Mg1/3Nb2/3)O-3/CaTiO3 (CMN/CT) microwave dielectric heterogeneous thin films prepared was investigated. Precursor solutions for CMN and CT synthesis were obtained by Pechini method. The arrangement pattern has affected structure and properties of heterogeneous thin film. The CMN-CT arrangement heterostructure thin film has second phase from the CMN films layer. The CT-CMN heterostructure film which has a smooth and dense microstructure was composed of pure perovskite phase without any second phase, this result was attributed to the CT film layer which is a buffer layer between substrate and CMN film layer. At 1MHz frequency, CT-CMN exhibits the dielectric properties of epsilon(r)=47.5, tan delta=0.020.
机构:
Liupanshui Normal Univ, Dept Phys & Elect, Liupanshui 553004, Peoples R ChinaLiupanshui Normal Univ, Dept Phys & Elect, Liupanshui 553004, Peoples R China
Hu, Mingzhe
Mu, Kaijun
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Liupanshui Normal Univ, Dept Phys & Elect, Liupanshui 553004, Peoples R ChinaLiupanshui Normal Univ, Dept Phys & Elect, Liupanshui 553004, Peoples R China
Mu, Kaijun
Ding, Zhao
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Liupanshui Normal Univ, Dept Phys & Elect, Liupanshui 553004, Peoples R ChinaLiupanshui Normal Univ, Dept Phys & Elect, Liupanshui 553004, Peoples R China
Ding, Zhao
Xiong, Gang
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Liupanshui Normal Univ, Dept Phys & Elect, Liupanshui 553004, Peoples R ChinaLiupanshui Normal Univ, Dept Phys & Elect, Liupanshui 553004, Peoples R China
机构:
Liupanshui Normal Univ, Dept Phys & Elect, Liupanshui 553004, Peoples R ChinaLiupanshui Normal Univ, Dept Phys & Elect, Liupanshui 553004, Peoples R China
Hu, Mingzhe
Mu, Kaijun
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h-index: 0
机构:
Liupanshui Normal Univ, Dept Phys & Elect, Liupanshui 553004, Peoples R ChinaLiupanshui Normal Univ, Dept Phys & Elect, Liupanshui 553004, Peoples R China
Mu, Kaijun
Ding, Zhao
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Liupanshui Normal Univ, Dept Phys & Elect, Liupanshui 553004, Peoples R ChinaLiupanshui Normal Univ, Dept Phys & Elect, Liupanshui 553004, Peoples R China
Ding, Zhao
Xiong, Gang
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Liupanshui Normal Univ, Dept Phys & Elect, Liupanshui 553004, Peoples R ChinaLiupanshui Normal Univ, Dept Phys & Elect, Liupanshui 553004, Peoples R China