Growth Rate and Thickness Uniformity of Epitaxial Graphene

被引：6

作者：

Strupinski, W. ^{[1
]}

Drabinska, A. ^{[2
]}

Bozek, R. ^{[2
]}

Borysiuk, J. ^{[1
,2
]}

Wysmolek, A. ^{[2
]}

Stepniewski, R. ^{[2
]}

Kosciewicz, K. ^{[1
]}

Caban, P. ^{[1
]}

Korona, K. ^{[2
]}

Grodecki, K. ^{[1
,2
]}

Geslin, Pierre-Antoine ^{[3
]}

Baranowski, J. M. ^{[1
,2
]}

机构：

[1] Inst Elect Mat Technol, Wolczynska 133, PL-01919 Warsaw, Poland

[2] Univ Warsaw, Inst Expt Phys, PL-00681 Warsaw, Poland

[3] Ecole Natl Super Mines, F-42023 St Etienne, France

来源：

SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2 | 2010年 / 645-648卷

关键词：

graphene; epitaxy; growth parameters; uniformity; mechanism;

D O I：

10.4028/www.scientific.net/MSF.645-648.569

中图分类号：

TB33 [复合材料];

学科分类号：

摘要：

The paper provides a deeper understanding of key-parameters of epitaxial graphene growth techniques on SiC. At 1600 degrees C, the graphene layer is continuous and covers a large area of the substrate. Significant differences in the growth rate could be observed for different reactor pressures and the polarity of SiC substrates as well as for the substrate miscut and surface quality. In addition, graphene thickness uniformity and mechanism of ridges creation was examined.

引用

页码：569 / +

页数：2

共 6 条

[1] BERGER C, 2004, J PHYS CHEM B
[2] Emtsev KV, 2009, NAT MATER, V8, P203, DOI [10.1038/nmat2382, 10.1038/NMAT2382]
[3] Electric field effect in atomically thin carbon films
Novoselov, KS
Geim, AK
Morozov, SV
Jiang, D
Zhang, Y
Dubonos, SV
Grigorieva, IV
Firsov, AA
[J]. SCIENCE, 2004, 306 (5696) : 666 - 669
[4] STRUPINSKI W, 2009, MATER SCI FORUM, V615, P109
[5] Homogeneous large-area graphene layer growth on 6H-SiC(0001)
Virojanadara, C.
Syvaejarvi, M.
Yakimova, R.
Johansson, L. I.
Zakharov, A. A.
Balasubramanian, T.
[J]. PHYSICAL REVIEW B, 2008, 78 (24):
[6] Top-gated graphene field-effect-transistors formed by decomposition of SiC
Wu, Y. Q.
Ye, P. D.
Capano, M. A.
Xuan, Y.
Sui, Y.
Qi, M.
Cooper, J. A.
Shen, T.
Pandey, D.
Prakash, G.
Reifenberger, R.
[J]. APPLIED PHYSICS LETTERS, 2008, 92 (09)

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