Contactless electroreflectance study of Fermi-level pinning at the surface of cubic GaN

被引：11

作者：

Kudrawiec, R. ^{[1
]}

Tschumak, E. ^{[2
]}

Misiewicz, J. ^{[1
]}

As, D. J. ^{[2
]}

机构：

[1] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland

[2] Univ Paderborn, Dept Phys, D-33095 Paderborn, Germany

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 24期

关键词：

conduction bands; electroreflectance; Fermi level; gallium compounds; III-V semiconductors; wide band gap semiconductors; FRANZ-KELDYSH OSCILLATIONS; PHOTOREFLECTANCE; SEMICONDUCTORS; GAAS;

D O I：

10.1063/1.3455907

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Van Hoof structures C. Van Hoof, K. Deneffe, J. De Boeck, D. J. Arent, and G. Borghs, [Appl. Phys. Lett. 54, 608 (1989)] with various thicknesses of the undoped layer, for which a homogeneous built-in electric field is expected, were grown for studies of the Fermi-level pinning at the surface of cubic GaN. The built-in electric field in the undoped GaN layer was determined from contactless electroreflectance measurements of Franz-Keldysh oscillations. A good agreement between the determined and calculated electric field has been found for the Fermi-level located similar to 0.4 eV below the conduction band at the surface. (C) 2010 American Institute of Physics. [doi:10.1063/1.3455907]

引用

页数：3

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