Thermal Transport in Single-Layer MoS2 and Black Phosphorus Transistors

被引:4
作者
Liu, Leitao [1 ]
Guo, Jing [1 ]
机构
[1] Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA
基金
美国国家科学基金会;
关键词
Black phosphorus (BP); Fourier's law; MoS2; thermal boundary conditions; thermal transport; FIELD-EFFECT TRANSISTORS; CONDUCTIVITY;
D O I
10.1109/TED.2015.2512262
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Ballistic thermal conductance in single-layer MoS2 and black phosphorus (BP) is calculated based on the phonon dispersion. In single-layer MoS2, the ballistic thermal conductance is almost isotropic of a value of 10.7x10(8) W/m(2)K; while in single-layer BP, the in-plane ballistic thermal conductance is anisotropic with a value of 12.8 x 10(8) W/m(2)K in the zigzag direction and 7.1 x 10(8) W/m(2)K in the armchair direction. Thermal transport behaviors at both steady state and transient state in double-gated MOSFET-like transistors with single-layer MoS2 and BP used as the channel material are studied. The conventional Fourier's law with contact temperatures as the boundary conditions and modified boundary conditions that can capture quasi-ballistic phonon transport effects are used. The simulation results show that Fourier's law with contact temperatures as the boundary conditions underestimate the peak temperature rise by 64% in single-layer MoS2 transistors and 56% in single-layer BP transistors when the channel length is comparable to the phonon mean free path. And the strong anisotropic thermal properties of single-layer BP lead to higher temperature rise in the armchair direction than that in the zigzag direction.
引用
收藏
页码:1189 / 1194
页数:6
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