Growth of bulk GaN with low dislocation density by the ammonothermal method using polycrystalline GaN nutrient

被引：11

作者：

Hashimoto, Tadao ^{[1
]}

Wu, Fen. Z.

Speck, James S.

Nakamura, Shuji

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, UCSB Grp, ERATO, JST, Santa Barbara, CA 93106 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2007年 / 46卷 / 20-24期

关键词：

bulk GaN; ammenothermal growth; dislocations; etch pit density;

D O I：

10.1143/JJAP.46.L525

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A bulk GaN crystal with improved structural quality was grown via ammonthermal growth with polycrystalline GaN nutrient and a sodium amide mineralize-. The threading dislocation density estimated by plan-view transmission electron microscopy observations was less than 1 X 10(6) cm(-2) for the Ga-face and 1 X 10(7)cm(-2) for the N-face. There was no dislocation generation observed at the interface on the Ga-face although a few defects were generated at the interface on the N-face. The chemical etching revealed macroscopic grains on the N-face.

引用

页码：L525 / L527

页数：3