Promising SiGe superlattice and quantum well laser candidates

被引:0
作者
Sun, G [1 ]
Soref, R [1 ]
Ikonic, Z [1 ]
机构
[1] Univ Massachusetts, Dept Phys, Boston, MA 02125 USA
来源
TOWARDS THE FIRST SILICON LASER | 2003年 / 93卷
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中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
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页码:293 / 306
页数:14
相关论文
共 14 条
[1]   Silicon-based interminiband infrared laser [J].
Friedman, L ;
Soref, RA ;
Sun, G .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (07) :3480-3485
[2]   Quantum parallel laser: A unipolar superlattice interminiband laser [J].
Friedman, L ;
Soref, RA ;
Sun, G .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (05) :593-595
[3]   SiGe/Si THz laser based on transitions between inverted mass light-hole and heavy-hole subbands [J].
Friedman, L ;
Sun, G ;
Soref, RA .
APPLIED PHYSICS LETTERS, 2001, 78 (04) :401-403
[4]   Theory of the strain-symmetrized silicon-based Ge-Si superlattice laser [J].
Friedman, L ;
Soref, RA ;
Sun, G ;
Lu, YW .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1998, 4 (06) :1029-1034
[5]   Asymmetric strain-symmetrized Ge-Si interminiband laser [J].
Friedman, L ;
Soref, RA ;
Sun, G ;
Lu, Y .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1998, 10 (12) :1715-1717
[6]  
HARRISON P, 2001, 6 INT C INT TRANS QU
[7]  
IKONIC Z, 2001, IN PRESS INT J COMP
[8]  
KELSALL RW, 2003, SENSING SCI ELECT TE, V1
[9]  
Soref R. A., 1999, P SOC PHOTO-OPT INS, V3795, P515
[10]   Terahertz gain in a SiGe/Si quantum staircase utilizing the heavy-hole inverted effective mass [J].
Soref, RA ;
Sun, G .
APPLIED PHYSICS LETTERS, 2001, 79 (22) :3639-3641