Dislocation-related luminescence in single-crystal silicon subjected to silicon ion implantation and subsequent annealing

被引：17

作者：

Sobolev, N. A. ^{[1
]}

Emel'yanov, A. M.

Sakharov, V. I.

Serenkov, I. T.

Shek, E. I.

Tetel'baum, D. I.

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] NI Lobachevskii State Univ, Res Physicotech Inst, Nizhnii Novgorod 603950, Russia

来源：

SEMICONDUCTORS | 2007年 / 41卷 / 05期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/S1063782607050107

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Implantation of silicon ions with an energy of 100 keV at a dose of 1 x 10(17) cm(-2) into n-type floatzone Si does not lead to the formation of an amorphous layer. Subsequent annealing in a chlorine-containing atmosphere at 1100 degrees C gives rise to dislocation-related luminescence. The intensity of the dominant D1 line peaked at a wavelength of similar to 1.54 mu m grows as the annealing time is increased from 15 to 60 min.

引用

页码：537 / 539

页数：3

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