The Significance of Polarons and Dynamic Disorder in Halide Perovskites

被引:112
作者
Schilcher, Maximilian J. [1 ]
Robinson, Paul J. [2 ]
Abramovitch, David J. [3 ]
Tan, Liang Z. [4 ]
Rappe, Andrew M. [5 ]
Reichman, David R. [2 ]
Egger, David A. [1 ]
机构
[1] Tech Univ Munich, Dept Phys, D-85748 Garching, Germany
[2] Columbia Univ, Dept Chem, New York, NY 10027 USA
[3] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
[4] Lawrence Berkeley Natl Lab, Mol Foundry, Berkeley, CA 94720 USA
[5] Univ Penn, Dept Chem, Philadelphia, PA 19104 USA
基金
美国国家科学基金会;
关键词
LEAD IODIDE PEROVSKITE; TEMPERATURE-DEPENDENCE; LOW-COST; CARRIER MOBILITIES; CHARGE-TRANSPORT; LONE-PAIR; PHONONS; RECOMBINATION; LOCALIZATION; CROSSOVER;
D O I
10.1021/acsenergylett.1c00506
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The development of halide perovskite semiconductors led to various technological breakthroughs in optoelectronics, in particular in the areas of photovoltaics and light-emitting diodes. Additionally, the study of their fundamental properties has uncovered intriguing puzzles that demand explanation. Polaronic effects associated with the coupling microscopic mechanism to explain various unusual experimental of electrons and holes to polar lattice vibrations are often invoked as a - observations. While some form of polaronic behavior undoubtedly exists in these systems, several assumptions underlying standard models used to describe a polaron mechanism appear to be strongly violated in these materials. In this Perspective, we investigate the role of polaronic effects in halide perovskites and summarize signatures and failures of the polaron picture to explain physical characteristics of the materials. We highlight the importance of the complementary dynamic disorder concept that can rationalize various key properties of halide perovskites for which standard polaron and band-theory pictures of carrier transport fail.
引用
收藏
页码:2162 / 2173
页数:12
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