Orientation-dependent dissolution and growth kinetics of InxGa1-xSb by vertical gradient freezing method under microgravity

被引：8

作者：

Kumar, V. Nirmal ^{[1
]}

Hayakawa, Y. ^{[2
]}

Arivanandhan, M. ^{[3
]}

Rajesh, G. ^{[4
]}

Koyama, T. ^{[2
]}

Momose, Y. ^{[2
]}

Ozawa, T. ^{[5
]}

Okano, Y. ^{[1
,2
,6
]}

Inatomi, Y. ^{[1
,2
]}

机构：

[1] Japan Aerosp Explorat Agcy, Inst Space & Astronaut Sci, Sagamihara, Kanagawa, Japan

[2] Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka, Japan

[3] Anna Univ, Ctr Nanosci & Technol, Chennai, Tamil Nadu, India

[4] Tagore Inst Engn & Technol, Deviyakurichi, Attur, India

[5] Shizuoka Inst Sci & Technol, Dept Elect Engn, Shizuoka, Japan

[6] Osaka Univ, Grad Sch Engn Sci, Osaka, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2018年 / 496卷

关键词：

A1. Directional solidification; A2. Growth from melt; A2. Microgravity conditions; B2. Semiconducting III-V materials; IN-SITU OBSERVATION;

D O I：

10.1016/j.jcrysgro.2018.04.033

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

InxGa1-xSb crystals were grown from (1 1 0), (1 1 1)A, and(l 1 1 )B planes of GaSb under microgravity and their dissolution and growth kinetics were discussed. The dissolution geometry is independent of orientation even when the rate of dissolution is varied. The growth rate of (1 1 0) was lied in-between (1 1 1 )B and (1 1 1 )A experiments. The growth kinetics are largely affected by the dissolution process through the establishment of a concentration gradient in the melt. (C) 2018 Elsevier B.V. All rights reserved.

引用

页码：15 / 17

页数：3

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