On qualitative analysis of the upper band effects in very-low-energy electron diffraction and photoemission

被引：12

作者：

Strocov, VN ^{[1
]}

机构：

[1] Chalmers Univ Technol, Dept Phys, S-41296 Gothenburg, Sweden

[2] Gothenburg Univ, S-41296 Gothenburg, Sweden

[3] Inst High Performance Computat & Data Bases, St Petersburg 194291, Russia

来源：

SOLID STATE COMMUNICATIONS | 1998年 / 106卷 / 02期

关键词：

electronic band structure; electron emission spectroscopies;

D O I：

10.1016/S0038-1098(97)10232-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Experimental very-low-energy electron diffraction (VLEED) and photoemision (PE) bandmapping, particularly for non-free-electron materials, requires to analyze the partial effects of the upper bands composing the total electron state. These effects are related to the partial absorbed currents (PACs) in the VLEED process. I describe a simple method to estimate PACs, using only real-k(perpendicular to) Bloch waves within the no-absorption approximation. The method may thus be implemented on top of any standard bandstructure code at negligible computational cost. The accuracy suffices for qualitative analysis in experimental VLEED and PE. (C) 1998 Elsevier Science Ltd.

引用

页码：101 / 105

页数：5

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