High-quality AlN nucleation layer on SiC substrate grown by MOVPE: Growth, structural and optical characteristics

被引：8

作者：

Narang, Kapil ^{[1
,2
]}

Pandey, Akhilesh ^{[1
]}

Khan, Ruby ^{[1
]}

Singh, Vikash K. ^{[1
]}

Bag, Rajesh K. ^{[1
]}

Padmavati, M. V. G. ^{[1
]}

Tyagi, Renu ^{[1
]}

Singh, Rajendra ^{[2
]}

机构：

[1] Solid State Phys Lab, Lucknow Rd, Delhi 110054, India

[2] Indian Inst Technol Delhi, Dept Phys, New Delhi 110016, India

来源：

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2022年 / 278卷

关键词：

AlN; MOVPE; Stress; Surface morphology; V/III ratio; CHEMICAL-VAPOR-DEPOSITION; THREADING DISLOCATIONS; ALUMINUM NITRIDE; ELECTRONIC-PROPERTIES; GAN; TEMPERATURE; EVOLUTION; DENSITY; BUFFER; FILMS;

D O I：

10.1016/j.mseb.2022.115635

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin AlN epi-layers (~100 nm) were grown on a SiC substrate by MOVPE (Metal Organic Vapor Phase Epitaxy). The effect of V/III ratio and growth rate on the surface morphology, quality (crystalline/interface), and stress of AlN epi-layer were studied. It was found that the quality of AlN epi-layer depends strongly upon the V/III ratio and growth rate. Crystalline quality improved significantly as reflected by very low X-ray rocking curves FWHM values of symmetric (004) and asymmetric (204) planes, which are-355 arc-sec and-840 arc-sec, respectively for a high V/III ratio and low growth rate. The AlN/SiC interface quality and surface morphology of AlN epi-layer were also improved remarkably. Raman spectroscopy results indicated that dislocation density influenced the biaxial stress (0.75 to 1.05 GPa). The blue shift in Fourier Transform Infra-Red spectroscopy of E-1(TO) mode of AlN epi-layer as compared to stress-free value (i.e. 670 cm(-1)) is in close agreement with the Raman results.

引用

页数：7

共 45 条

[11]

George T, 2005, IEEE SENSOR, P1253

[12]

Goldberg Y., 2001, Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe

[13] Control of epitaxial defects for optimal AlGaN/GaN HEMT performance and reliability [J].

Green, DS ;

Gibb, SR ;

Hosse, B ;

Vetury, R ;

Grider, DE ;

Smart, JA .

JOURNAL OF CRYSTAL GROWTH, 2004, 272 (1-4) :285-292

[14]

Helava H., 2007, PHYS STATUS SOLIDI C, V4

[15] Annihilation mechanism of threading dislocations in AlN grown by growth form modification, method using V/III ratio [J].

Imura, Masataka ;

Fujimoto, Naoki ;

Okada, Narihito ;

Balakrishnan, Krishnan ;

Iwaya, Motoaki ;

Kamiyama, Satoshi ;

Amano, Hiroshi ;

Akasaki, Isamu ;

Noro, Tadashi ;

Takagi, Takashi ;

Bandoh, Akira .

JOURNAL OF CRYSTAL GROWTH, 2007, 300 (01) :136-140

[16] Effect of AlN buffer layer deposition conditions on the properties of GaN layer [J].

Ito, T ;

Ohtsuka, K ;

Kuwahara, K ;

Sumiya, M ;

Takano, Y ;

Fuke, S .

JOURNAL OF CRYSTAL GROWTH, 1999, 205 (1-2) :20-24

[17] Metalorganic chemical vapor deposition of high mobility AlGaN/GaN heterostructures [J].

Keller, S ;

Parish, G ;

Fini, PT ;

Heikman, S ;

Chen, CH ;

Zhang, N ;

DenBaars, SP ;

Mishra, UK ;

Wu, YF .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (10) :5850-5857

[18] Influence of AlN nucleation layer temperature on GaN electronic properties grown on SiC [J].

Koleske, DD ;

Henry, RL ;

Twigg, ME ;

Culbertson, JC ;

Binari, SC ;

Wickenden, AE ;

Fatemi, M .

APPLIED PHYSICS LETTERS, 2002, 80 (23) :4372-4374

[19] MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC [J].

Lemettinen, J. ;

Okumura, H. ;

Kim, I. ;

Rudzinski, M. ;

Grzonka, J. ;

Palacios, T. ;

Suihkonen, S. .

JOURNAL OF CRYSTAL GROWTH, 2018, 487 :50-56

[20] 200 nm deep ultraviolet photodetectors based on AlN [J].

Li, J. ;

Fan, Z. Y. ;

Dahal, R. ;

Nakarmi, M. L. ;

Lin, J. Y. ;

Jiang, H. X. .

APPLIED PHYSICS LETTERS, 2006, 89 (21)

← 1 2 3 4 5 →