High-quality AlN nucleation layer on SiC substrate grown by MOVPE: Growth, structural and optical characteristics

被引：8

作者：

Narang, Kapil ^{[1
,2
]}

Pandey, Akhilesh ^{[1
]}

Khan, Ruby ^{[1
]}

Singh, Vikash K. ^{[1
]}

Bag, Rajesh K. ^{[1
]}

Padmavati, M. V. G. ^{[1
]}

Tyagi, Renu ^{[1
]}

Singh, Rajendra ^{[2
]}

机构：

[1] Solid State Phys Lab, Lucknow Rd, Delhi 110054, India

[2] Indian Inst Technol Delhi, Dept Phys, New Delhi 110016, India

来源：

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2022年 / 278卷

关键词：

AlN; MOVPE; Stress; Surface morphology; V/III ratio; CHEMICAL-VAPOR-DEPOSITION; THREADING DISLOCATIONS; ALUMINUM NITRIDE; ELECTRONIC-PROPERTIES; GAN; TEMPERATURE; EVOLUTION; DENSITY; BUFFER; FILMS;

D O I：

10.1016/j.mseb.2022.115635

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin AlN epi-layers (~100 nm) were grown on a SiC substrate by MOVPE (Metal Organic Vapor Phase Epitaxy). The effect of V/III ratio and growth rate on the surface morphology, quality (crystalline/interface), and stress of AlN epi-layer were studied. It was found that the quality of AlN epi-layer depends strongly upon the V/III ratio and growth rate. Crystalline quality improved significantly as reflected by very low X-ray rocking curves FWHM values of symmetric (004) and asymmetric (204) planes, which are-355 arc-sec and-840 arc-sec, respectively for a high V/III ratio and low growth rate. The AlN/SiC interface quality and surface morphology of AlN epi-layer were also improved remarkably. Raman spectroscopy results indicated that dislocation density influenced the biaxial stress (0.75 to 1.05 GPa). The blue shift in Fourier Transform Infra-Red spectroscopy of E-1(TO) mode of AlN epi-layer as compared to stress-free value (i.e. 670 cm(-1)) is in close agreement with the Raman results.

引用

页数：7

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