Nonpolar resistive switching in the Pt/MgO/Pt nonvolatile memory device

被引：110

作者：

Huang, Hsin-Hung ^{[1
]}

Shih, Wen-Chieh ^{[1
]}

Lai, Chih-Huang ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 19期

关键词：

Auger electron spectra; electrical conductivity transitions; electrical resistivity; magnesium compounds; MIM devices; platinum; random-access storage; thin films; X-ray photoelectron spectra; THIN-FILMS;

D O I：

10.1063/1.3429024

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nonpolar resistive switching (RS), which is the coexistence of unipolar and bipolar RS characteristics, in the Pt/MgO/Pt memory device with the nonforming nature is demonstrated. The nonforming nature is ascribed to the relatively high defect density of the MgO film deposited by using the ion beam sputtering in Ar atmosphere. The results of Auger electron spectroscopy and x-ray photoelectron spectroscopy analyses combing with the temperature dependence of resistance suggest that metallic Mg filaments are formed in the low resistance state. The voltage-polarity-independent RESET process implies that filaments may be ruptured by local Joule heating, leading to nonpolar characteristics. (C) 2010 American Institute of Physics. [doi:10.1063/1.3429024]

引用

页数：3

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