Electrical characterization of InAs/(GaIn)Sb infrared superlattice photodiodes for the 8 to 12 μm range

被引：38

作者：

Bürkle, L ^{[1
]}

Fuchs, F ^{[1
]}

Kiefer, R ^{[1
]}

Pletschen, W ^{[1
]}

Sah, RE ^{[1
]}

Schmitz, J ^{[1
]}

机构：

[1] Fraunhofer Inst Angew Festkorperphys, D-79108 Freiburg, Germany

来源：

INFRARED APPLICATIONS OF SEMICONDUCTORS III | 2000年 / 607卷

关键词：

D O I：

10.1557/PROC-607-75

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

InAs/(GaIn)Sb superlattice photodiodes with a cutoff wavelength of 8.7 mu m show a dynamic impedance of R(0)A = 1.5 k Omega cm(2) at 77 K and a responsivity of 2 A/W, corresponding to a detectivity of D* = 1 x 10(12) cm root Hz/W. Diffusion limited performance is observed above 100 K. At lower temperatures the diodes are limited by generation-recombination currents. An analysis of the influence of different diode sidewall passivations on the surface contribution to the diode leakage current is presented. The out-of-plane electron mobility as well as the relative contributions of the electron and hole diffusion currents to the diode current were determined by a measurement of the magnetic field dependence of the reverse saturation current density of the diodes.

引用

页码：77 / 82

页数：6

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