First-prinicples study of Mn-N co-doped p-type ZnO

被引:7
作者
Chen Li-Jing [1 ,2 ]
Li Wei-Xue [1 ,2 ]
Dai Jian-Feng [1 ,2 ]
Wang Qing [2 ]
机构
[1] Lanzhou Univ Technol, State Key Lab Adv Proc & Recycling Nonferrous Met, Lanzhou 730050, Peoples R China
[2] Lanzhou Univ Technol, Sch Sci, Lanzhou 730050, Peoples R China
关键词
first-principles; ZnO; p-type doping; density of states; 1ST-PRINCIPLE;
D O I
10.7498/aps.63.196101
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Based on first-principles plane-wave ultrasoft pseudopotential density functional theory method, the lattice structure, formation energy, density of states and charge density of the ZnO:(Mn,N) system are calculated and studied theoretically. Results show that Mn and N co-doped ZnO system is more suitable for doping into a p-type system, for it has a lower impurity formation energy and higher chemical stability; Mn and N in a proportion of 1: 2 doping system can effectively reduce the formation energy of the system and so it is more stable; when the system forms a double acceptor level defects, the p-type characteristic of the system is more obvious, for the solubility of impurities and the number of carriers in the system are increased. In addition, it is found that more impurities can go through the Fermi level density of states in the Mn-N co-doped system, while the 2p state density of N is widened and effective mass of holes is smaller and more delocalized. Moreover, compared with the Mn-N-doped system, the density of states of Mn-2N co-doped system is more dispersed near the Fermi level, and the non-localized characteristics are distinctive, thus it is expected to be a more effective means of p-type doping.
引用
收藏
页数:7
相关论文
共 22 条
[1]   First principles study of In-N codoped ZnO [J].
Chen Kun ;
Fan Guang-Han ;
Zhang Yong ;
Ding Shao-Feng .
ACTA PHYSICA SINICA, 2008, 57 (05) :3138-3147
[2]  
Decremp SF, 2003, PHYS REV B, V68
[3]   COMPENSATION PROCESSES IN NITROGEN DOPED ZNSE [J].
HAUKSSON, IS ;
SIMPSON, J ;
WANG, SY ;
PRIOR, KA ;
CAVENETT, BC .
APPLIED PHYSICS LETTERS, 1992, 61 (18) :2208-2210
[4]   LDA and GGA calculations for high-pressure phase transitions in ZnO and MgO [J].
Jaffe, JE ;
Snyder, JA ;
Lin, ZJ ;
Hess, AC .
PHYSICAL REVIEW B, 2000, 62 (03) :1660-1665
[5]   Native point defects in ZnO [J].
Janotti, Anderson ;
Van de Walle, Chris G. .
PHYSICAL REVIEW B, 2007, 76 (16)
[6]   Comparisons of ZnO codoped by group IIIA elements (Al, Ga, In) and N: a first-principle study [J].
Li Ping ;
Deng Sheng-Hua ;
Zhang Li ;
Yu Jiang-Ying ;
Liu Guo-Hong .
CHINESE PHYSICS B, 2010, 19 (11)
[7]   First-Principle Studies on Conductive Behaviors of P-Type ZnO Codoped by N and B [J].
Li Ping ;
Deng Sheng-Hua ;
Zhang Xue-Yong ;
Zhang Li ;
Liu Guo-Hong ;
Yu Jiang-Ying .
COMMUNICATIONS IN THEORETICAL PHYSICS, 2010, 54 (04) :723-727
[8]   ZnO light-emitting devices with a lifetime of 6.8 hours [J].
Liu, J. S. ;
Shan, C. X. ;
Shen, H. ;
Li, B. H. ;
Zhang, Z. Z. ;
Liu, L. ;
Zhang, L. G. ;
Shen, D. Z. .
APPLIED PHYSICS LETTERS, 2012, 101 (01)
[9]   Li-doping effects on the electrical properties of ZnO films prepared by the chemical-bath deposition method [J].
Mohamed, GA ;
Abd El-Moiz, AB ;
Rashad, M .
PHYSICA B-CONDENSED MATTER, 2005, 370 (1-4) :158-167
[10]   LITHIUM CRYSTAL PROPERTIES FROM HIGH-QUALITY HARTREE-FOCK WAVE-FUNCTIONS [J].
PACK, JD ;
MONKHORST, HJ ;
FREEMAN, DL .
SOLID STATE COMMUNICATIONS, 1979, 29 (10) :723-725