GaN X-band 43% Internally-Matched FET with 60W Output Power

被引：0

作者：

Kimura, M. ^{[1
]}

Yamauchi, K. ^{[1
]}

Yamanaka, K. ^{[1
]}

Noto, H. ^{[1
]}

Kuwata, E. ^{[1
]}

Otsuka, H. ^{[1
]}

Inoue, A. ^{[1
]}

Kamo, Y. ^{[2
]}

Miyazaki, M. ^{[1
]}

机构：

[1] Mitsubishi Electr Corp, Informat Technol R&D Ctr, 5-1-1 Ofuna, Kanagawa 2478501, Japan

[2] Mitsubishi Electr Corp, High Frequency & Optical Device Works, Itami, Hyogo 6648641, Japan

来源：

APMC: 2008 ASIA PACIFIC MICROWAVE CONFERENCE (APMC 2008), VOLS 1-5 | 2008年

关键词：

GaN HEMT; power amplifier; power added efficiency;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An X-band high efficiency GaN internally-matched FET has been developed. Asymmetric matching circuit layout is employed to avoid decrease of efficiency caused by impedance mismatch and unbalance power dividing in matching circuits. The designed asymmetric input and output matching circuits have achieved equal dividing characteristics. A power added efficiency (PAE) of 43.4% and an output power of 47.8dBm (60.3W) have been achieved with the developed GaN internally-matched FET.

引用

页码：238 / +

页数：3