Shape-dependent optoelectrical investigation of Cu2+xCd1-xSnS4 thin films for solar cell applications

被引：34

作者：

Henry, Johnson ^{[1
]}

Prema, Pasunkili ^{[1
]}

Padiyan, Duraipandi Pathinettam ^{[1
]}

Mohanraj, Kannusamy ^{[1
]}

Sivakumar, Ganesan ^{[2
]}

机构：

[1] Manonmaniam Sundaranar Univ, Dept Phys, Tirunelveli 627012, Tamil Nadu, India

[2] Annamalai Univ, Centralised Instrumentat & Serv Lab, Dept Phys, Annamalainagar 608002, Tamil Nadu, India

来源：

NEW JOURNAL OF CHEMISTRY | 2016年 / 40卷 / 03期

关键词：

IONIC-LAYER ADSORPTION; COUNTER ELECTRODES; OPTICAL-PROPERTIES; FACILE SYNTHESIS; GRAIN-SIZE; DEPOSITION; EFFICIENT;

D O I：

10.1039/c5nj03154k

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Cu2+xCd1-xSnS4 thin films were prepared with excess Cu concentrations (x = 0, 0.02, 0.04, 0.06, 0.08 and 0.1) by a successive ionic layer adsorption and reaction (SILAR) method. The deposited films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), UV-visible spectroscopy and I-V analysis. XRD analysis confirms the formation of tetragonal structured Cu2CdSnS4 thin films for all the excess Cu concentrations, while the corresponding FESEM images showed microstructural change. It may be attributed to the injection of excess Cu atoms into the Cd sites of the Cu2CdSnS4. The absorption coefficient is found to be greater than 10(4) cm(-1) in the visible region and the bandgap energy is slightly tuned from 1.68 eV to 1.58 eV when compared to Cu2CdSnS4. The Cu2.1Cd0.9SnS4 film showed the highest photoresponse.

引用

页码：2609 / 2618

页数：10

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