Effect of Gate Length on the Electrical Characteristics of Nanoelectronic AIGaN/GaN High Electron Mobility Transistors to Fabricate the Biomedical Sensors in Nanoelectronics

In this work, the drain current is optimised and achieved up to 589 mA with respect to the gate length, aluminium mole fraction, drain voltage and gate voltage in nanoelectronic single-heterojunction AIGaN/GaN high electron mobility transistors (HEMTs). The effect of gate length on drain characteristics in these HEMTs is one novelty of this work. Also, the above investigations in HEMTs of nanoelectronic dimensions is another novelty of this work from the aspect of geometrical dimensions according to a strong and updated literature survey. According to this work, the drain current is larger at higher aluminium mole fraction. Also, the drain current is higher at lower gate length with a fixed source to gate distance. All simulation results are obtained by SILVACO-ATLAS software tool with a verification by MATLAB programs. This simulation work is completely supperted by the previously derived mathematical formulation according to the theoretical analysis on band gap discontinuity. This work will be useful to experimentally fabricate the sensors in nanoelectronics using these nanoelectronic HEMTs.