Impact of the backside potential on the current collapse of GaN SBDs and HEMTs

被引：0

作者：

Croon, J. A. ^{[1
]}

Hurkx, G. A. M. ^{[1
]}

Donkers, J. J. T. M. ^{[1
]}

Sonsky, J. ^{[2
]}

机构：

[1] NXP Semicond, Eindhoven, Netherlands

[2] NXP Semicond, Haasrode, Belgium

来源：

2015 IEEE 27TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S (ISPSD) | 2015年

关键词：

GaN; SBD; HEMT; Current Collapse; Charge Trapping; Packaging;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper shows both experimentally and in simulation that the amount of current collapse for GaN SBDs and HEMTs strongly depends on the node to which the backside is connected, i.e., how the device is packaged, and the underlying physics is explained. It is shown that the difference in current collapse is not due to a difference in charge trapping. The reduction in current collapse for a backside-to-anode/source connection is due to a compensating switching charge that is not present when the backside is connected to the cathode/drain, for which stronger current collapse is observed.

引用

页码：365 / 368

页数：4

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