Effect of B/C ratio on the physical properties of highly boron-doped diamond films

被引：34

作者：

Jia, Fuchao ^{[1
,2
]}

Bai, Yizhen ^{[1
,2
]}

Qu, Fang ^{[1
,2
]}

Zhao, Jijun ^{[1
,3
]}

Zhuang, Chunqiang ^{[1
,2
,3
]}

Jiang, Xin ^{[4
]}

机构：

[1] Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China

[2] Dalian Univ Technol, Minist Educ, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116024, Peoples R China

[3] Dalian Univ Technol, Coll Adv Sci & Technol, Dalian 116024, Peoples R China

[4] Univ Siegen, Inst Mat Engn, D-57076 Siegen, Germany

来源：

VACUUM | 2010年 / 84卷 / 07期

关键词：

Diamond film; Boron doping; HFCVD; SEM; XPS; PHOTOELECTRON-SPECTROSCOPY; DEPOSITED DIAMOND; THIN-FILMS; SURFACE; ELECTRODES; ACTIVATION;

D O I：

10.1016/j.vacuum.2010.01.003

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Highly boron-doped diamond films were deposited on silicon substrate by hot filament chemical vapor deposition in a gas mixture of hydrogen and methane. The chemical bonding states, surface texture, and electrical resistivity of these films were analyzed by X-ray photoelectron spectroscopy, scan, electron microscope, and four-point probe method. It was found that boron dopants play an important role in the texture and chemical bonding states of the diamond films. An appropriate concentration of boron dopants (B/C ratio of 10 000 ppm) can simultaneously improve crystal quality and reduce resistivity of the diamond films. The minimum resistivity of diamond films reaches 1.12 x 10(-2) Omega cm, which is applicable as electrodes. (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：930 / 934

页数：5

共 23 条

[1]

[Anonymous], 1995, Handbook of X-ray Photoelectron Spectroscopy. A Reference Book of Standard Spectra for Identification and Interpretation of XPS Data

[2] SEM and Raman analysis of boron-doped diamond coating on spherical textured substrates [J].

Azevedo, AF ;

De Barros, RCM ;

Serrano, SHP ;

Ferreira, NG .

SURFACE & COATINGS TECHNOLOGY, 2006, 200 (20-21) :5973-5977

[3] Photoelectron spectroscopy of hydrogen at the polycrystalline diamond surface [J].

Ballutaud, D. ;

Simon, N. ;

Girard, H. ;

Rzepka, E. ;

Bouchet-Fabre, B. .

[4] Role of the dopant in the superconductivity of diamond -: art. no. 237004 [J].

Blase, X ;

Adessi, C ;

Connétable, D .

PHYSICAL REVIEW LETTERS, 2004, 93 (23)

[5] SYNTHESIS AND CHARACTERIZATION OF BORON-DOPED CARBONS [J].

CERMIGNANI, W ;

PAULSON, TE ;

ONNEBY, C ;

PANTANO, CG .

CARBON, 1995, 33 (04) :367-374

[6] TRIMETHYLBORON DOPING OF CVD DIAMOND THIN-FILMS [J].

CIFRE, J ;

PUIGDOLLERS, J ;

POLO, MC ;

ESTEVE, J .

[7]

DSSHPANDE SV, 1994, APPL PHYS LETT, V65, P1757

[8] Chemical surface characterization of electrochemically and thermally oxidized boron-doped diamond film electrodes [J].

Ferro, S ;

Dal Colle, M ;

De Battisti, A .

CARBON, 2005, 43 (06) :1191-1203

[9] Electron-phonon interaction via electronic and lattice wannier functions: Superconductivity in boron-doped diamond reexamined [J].

Giustino, Feliciano ;

Yates, Jonathan R. ;

Souza, Ivo ;

Cohen, Marvin L. ;

Louie, Steven G. .

PHYSICAL REVIEW LETTERS, 2007, 98 (04)

[10] Residual stress, Young's modulus and fracture stress of hot flame deposited diamond [J].

Hollman, P ;

Alahelisten, A ;

Olsson, M ;

Hogmark, S .

THIN SOLID FILMS, 1995, 270 (1-2) :137-142

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