On the Efficiency and AM/AM Flatness of Inverse Class-F Power Amplifiers

被引:10
作者
Sharma, Tushar [1 ]
Roberts, Jeffrey S. [2 ]
Dhar, Sagar K. [3 ]
Shukla, Shishir [2 ]
Darraji, Ramzi [3 ]
Holmes, Damon G. [2 ]
Ghannouchi, Fadhel M. [3 ]
机构
[1] Princeton Univ, Princeton, NJ 08544 USA
[2] NXP Semicond, Chandler, AZ USA
[3] Univ Calgary, Calgary, AB, Canada
来源
2019 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) | 2019年
关键词
AM/AM; gallium nitride; high efficiency; inverse class F (F-1); harmonic load pull; input harmonics; P3dB; power amplifier;
D O I
10.1109/mwsym.2019.8701117
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Inverse Class-F (Class F-1) power amplifiers (PAs) are widely known to deliver excellent performance at saturation. Due to this, Class F-1 PAs are not recommended for applications where PA operation is required to be backed-off from saturation. This paper explores optimizing Class F-1 PA performance and maintaining the performance over a high range of gain compression levels. A simple model of the Class F-1 amplifier is proposed to approximate its harmonic-dependent behavior as seen at the internal reference plane. A load-pull based experimental approach is then presented, according to which input second-harmonic terminations are tuned, while maintaining quasi-ideal inverse Class F output matching conditions. The device under test used in the experiment is a 0.7 mm Gallium Nitride (GaN) die from NXP at a frequency of 2.6 GHz. Measured results provide significant insight into the impact of input harmonic manipulation on the amplitude-to-amplitude modulation (AM/AM) profile. A design space for second harmonic input impedance was found to provide relatively flatter AM/AM response of the Class F-1 PA yielding significantly improved RF performance at the 3-dB compression point (P3dB) compared to the classical Class F-1 PA with no second harmonic manipulation at the input.
引用
收藏
页码:460 / 463
页数:4
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