Thermal laser stimulation and NB-OBIC techniques applied to ESD defect localization

被引：5

作者：

Beauchêne, T

Lewis, D ^{[1
]}

Beaudoin, F

Pouget, V

Desplats, R

Fouillat, P

Perdu, P

Bafleur, M

Tremouilles, D

机构：

[1] Univ Bordeaux 1, IXL Lab, F-33405 Talence, France

[2] CNES, F-31401 Toulouse, France

[3] CNRS, LAAS, F-31077 Toulouse, France

来源：

MICROELECTRONICS RELIABILITY | 2003年 / 43卷 / 03期

关键词：

D O I：

10.1016/S0026-2714(02)00339-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents an experimental comparison of laser beam based techniques applied to a case study concerning ESD defect location. Thermal laser stimulation and non-biased optical beam induced current techniques are evaluated and discussed. Experimental results demonstrate the advantages and weak points of the two approaches. (C) 2003 Elsevier Science Ltd. All rights reserved.

引用

页码：439 / 444

页数：6

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