Characterization of random telegraph noise in 0.8 μm irradiated MOSFET's

被引：0

作者：

Barros, C ^{[1
]}

Valenza, M ^{[1
]}

de Murcia, M ^{[1
]}

Rigaud, D ^{[1
]}

机构：

[1] Univ Montpellier 2, Ctr Electron & Microoptoelectron Montpellier, CNRS, UMR 5507, F-34095 Montpellier 5, France

来源：

NOISE IN PHYSICAL SYSTEMS AND 1/F FLUCTUATIONS, PROCEEDINGS OF THE 14TH INTERNATIONAL CONFERENCE | 1997年

关键词：

D O I：

暂无

中图分类号：

O42 [声学];

学科分类号：

070206 ; 082403 ;

摘要：

Random telegraph noise is studied in subthreshold range before and after a 700 krad(Si) cobalt-60 irradiation dose. Statistical analysis is performed in the time domain to obtain characteristic time constants (tau(c) and tau(e)) and RTS amplitude (Delta I-D). These results are compared with those deduced from noise measurements. After irradiation the evolution of tau(c), tau(e), Delta I-D/I-D and of lorentzian plateau are analyzed.

引用

页码：228 / 231

页数：4