Investigation on mechanism of ultraprecision three-body polishing of single-crystal silicon carbide with voids by molecular dynamics simulation

被引：5

作者：

Dai, Houfu ^{[1
]}

Wu, Weilong ^{[1
]}

Fan, Wei ^{[2
]}

Du, Hao ^{[1
]}

机构：

[1] Guizhou Univ, Sch Mech Engn, Guiyang 550025, Peoples R China

[2] China Acad Engn Phys, Inst Machinery Mfg Technol, Mianyang 621999, Sichuan, Peoples R China

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2022年 / 128卷 / 09期

基金：

中国国家自然科学基金;

关键词：

Molecular dynamics; Voids; Three-body polishing; Subsurface damage; Dislocation; REMOVAL MECHANISMS; DUCTILE TRANSITION; DAMAGE; DEFORMATION; GROWTH; FABRICATION; 2-BODY; WEAR;

D O I：

10.1007/s00339-022-05950-x

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The existence of a void will affect the mechanics of the polishing behavior. Therefore, this paper investigated the mechanism of ultraprecision three-body polishing of a single-crystal cubic (3C) silicon carbide workpiece with voids using molecular dynamics simulation. The effects of void size, void shape, void arrangement, and the number of voids on the workpiece during polishing were studied. The results showed that structural transformation is the principal mode of chip formation at the nanoscale. The polishing force and normal stress are reduced when polishing the workpiece with voids, thereby weakening the strength and the ability to resist deformation of the material. In addition, the surface/subsurface damage of the workpiece with voids is exacerbated. The plastic deformation of the workpiece with voids is strengthened due to the high dislocation density, and the atomic removal is improved. This article provides significant guidance for a more thorough understanding of three-body polishing brittle material.

引用

页数：19

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