Small-Area Perovskite Photodiodes With High Detectivity and Stability

被引:5
作者
Zhang, Yang-Yang [1 ]
Xu, Jian-Long [1 ]
Zhang, Jing-Yue [1 ]
Yuan, Yu [1 ]
Gao, Xu [1 ]
Wang, Sui-Dong [1 ,2 ]
机构
[1] Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Suzhou 215123, Peoples R China
[2] Macau Univ Sci & Technol, Macao Inst Mat Sci & Engn MIMSE, Taipa, Macao, Peoples R China
基金
中国国家自然科学基金;
关键词
Perovskite photodiode; small area; specific detectivity; device stability; MA-free perovskite; SOLAR-CELLS; PERFORMANCE; LIGHT;
D O I
10.1109/LED.2021.3093237
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Small-area perovskite photodiodes with an active area of 50 mu m x 50 mu m are achieved, showing both high specific detectivity and excellent stability. The device exhibits a low dark current density of similar to 1.6x10(-8) A/cm(2) at a reverse bias of 0.1 V, a peak photoresponsivity of 1.74 A/W, and a peak specific detectivity of 1.5x10(13) Jones. Moreover, the device also shows superior photoresponse and thermal stability after continuous 1000 cycles of light switching and 400 h of thermal aging at 85 degrees C. The high performance is ascribed to the blocking of minority carrier injection from electrodes under a reverse bias and the high crystal quality and thermal stability of the CH3NH3(MA)-free perovskite photoactive layer.
引用
收藏
页码:1200 / 1203
页数:4
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